Natural p–n junctions at the mos2 flake edges
Web3 de mar. de 2024 · Ferroelectric gates can provide a strong polarization electric field. Here, we report the measurements of the band structure of few-layer MoS2 modulated by a ferroelectric P (VDF-TrFE) gate... Web14 de may. de 2014 · In the bulk region of MoS2, the Fermi level is located at 1.8 eV above the valence band maximum, possibly due to the formation of a graphite/MoS2 heterojunction. At the edge, however, we observe an upward band bending of 0.6 eV within a short depletion length of about 5 nm, analogous to the phenomena of Fermi level …
Natural p–n junctions at the mos2 flake edges
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http://www.nanoctr.cas.cn/hejun/keyanchengguo/201507/W020151027429163698566.pdf Web1 de may. de 2024 · However, the aggregation formed in nanosized MoS 2 reduces the exposure of active edge sites which hampers its electrocatalytic HER activity. In this paper, we demonstrate a facile hydrothermal synthesis of MoS 2 nanosheet/MoS 2 flake (MSN/MSF) homostructures by using MoS 2 flakes as templates.
Web17 de abr. de 2024 · Toxic gases are produced during the burning of fossil fuels. Room temperature (RT) fast detection of toxic gases is still challenging. Recently, MoS2 … Web31 de ene. de 2024 · The authors quantify the edge state contribution to electrical transport in monolayer MoS 2 /WSe 2 field-effect transistors, revealing a dominated non-linear …
Web23 de sept. de 2014 · Abstract. This paper demonstrates a technique to form a lateral homogeneous 2D MoS2 p-n junction by partially stacking 2D h-BN as a mask to p-dope … Web23 de sept. de 2014 · The fabricated lateral MoS2 p-n junction with asymmetric electrodes of Pd and Cr/Au displayed a highly efficient photoresponse (maximum external quantum efficiency of ∼7000%, specific detectivity of ∼5 × 10 (10) Jones, and light switching ratio of ∼10 (3)) and ideal rectifying behavior.
Web3 de ago. de 2024 · Novel GeSe/MoS 2 p-n heterojunctions are fabricated, combining the natural p-type doping in GeSe and n-type doping in MoS 2. The temperature dependence of the measured junction current reveals that GeSe and MoS2 have a type-II band alignment with a conduction band offset of ∼0.234 eV.
Web1 Supporting Information Natural p-n junctions at the MoS 2 flake edges Kang Wang 1,2, Takashi Taniguchi 3, Kenji Watanabe 4, Jiamin Xue 1* 1School of Physical Science and … dead rising 4 deluxe editionWeb1 de jun. de 2016 · Here, we show that the edges of as-exfoliated and etched MoS2 are naturally p-type doped and can form p-n junctions with the bulk of the flake. The width of these edge regions is around 20 nm. dead rising 4 download freeWebNatural p–n Junctions at the MoS 2 Flake Edges. Sign in ... Search by subject; Keyword search; Natural p–n Junctions at the MoS2 Flake Edges. Author(s) Kang Wang, Takashi Taniguchi, Kenji Watanabe, Jiamin Xue. Journal title: ACS Applied Materials & Interfaces 14 [34] 39039-39045 ISSN: 19448252, 19448244 ESI category: MATERIALS … general awning installation videoWeb19 de ago. de 2024 · School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China. 2. International Center for Materials Nanoarchitectonics, … dead rising 4 eatWebFormula of PN Junction. [Click Here for Sample Questions] The formula of PN junction is, E0 = V T lnN D.N A n2 V T l n N D. N A n i 2. Here, E0 is the junction voltage at zero bias. … dead rising 4 download torrentWeb26 de sept. de 2024 · MoS2 edges exhibit good hydrogen evolution reaction (HER) activity but poor oxygen evolution reaction (OER) activity. The development of MoS2 edge … general axel thorWebNatural p–n Junctions at the MoS 2 Flake Edges. ... 論文・分野で探す; キーワード検索; Natural p–n Junctions at the MoS2 Flake Edges. general awnings coupon code